? semiconductor components industries, llc, 2005 august, 2005 ? rev. 4 1 publication order number: MMSZ4678ET1/d MMSZ4678ET1 series zener voltage regulators 500 mw sod?123 surface mount three complete series of zener diodes are offered in the convenient, surface mount plastic sod?123 package. these devices provide a convenient alternative to the leadless 34?package style. features ? 500 mw rating on fr?4 or fr?5 board ? wide zener reverse voltage range ? 1.8 v to 43 v ? package designed for optimal automated board assembly ? small package size for high density applications ? esd rating of class 3 (>16 kv) per human body model ? peak power ? 225 w (8 x 20 s) ? pb?free packages are available mechanical characteristics: case: void-free, transfer-molded, thermosetting plastic case finish: corrosion resistant finish, easily solderable maximum case temperature for soldering purposes: 260 c for 10 seconds polarity: cathode indicated by polarity band flammability rating: ul 94 v?0 maximum ratings rating symbol max unit peak power dissipation @ 20 s (note 1) @ t l 25 c p pk 225 w total power dissipation on fr?5 board, (note 2) @ t l = 75 c derated above 75 c p d 500 6.7 mw mw/ c thermal resistance, (note 3) junction?to?ambient r ja 340 c/w thermal resistance, (note 3) junction?to?lead r jl 150 c/w junction and storage temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. nonrepetitive current pulse per figure 11. 2. fr?5 = 3.5 x 1.5 inches, using the minimum recommended footprint. 3. thermal resistance measurement obtained via infrared scan method. sod?123 case 425 style 1 1 cathode 2 anode see specific marking information in the device marking column of the electrical characteristics table on page 2 o f this data sheet. device marking information 1 2 devices listed in bold, italic are on semiconductor preferred devices. preferred devices are recommended choices for future use and best overall value. http://onsemi.com marking diagram xxx = device code (refer to page 2) m = date code = pb?free package (note: microdot may be in either location) xxx m 1 device package shipping ? ordering information mmsz4xxxet1 sod?123 3000/tape & reel mmsz4xxxet3 sod?123 10000/tape & ree l ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. mmsz4xxxet1g sod?123 (pb?free) 3000/tape & reel mmsz4xxxet3g sod?123 (pb?free) 10000/tape & ree l
MMSZ4678ET1 series http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.95 v max. @ i f = 10 ma) symbol parameter v z reverse zener voltage @ i zt i zt reverse current i r reverse leakage current @ v r v r reverse voltage i f forward current v f forward voltage @ i f zener voltage regulator i f v i i r i zt v r v z v f electrical characteristics (t a = 25 c unless otherwise noted, v f = 0.9 v max. @ i f = 10 ma) device* device marking zener voltage (note 1) leakage current v z (v) @ i zt i r @ v r min nom max a a v mmsz4684et1 cg3 3.13 3.3 3.47 50 7.5 1.5 mmsz4688et1, g cg7 4.47 4.7 4.94 50 10 3 mmsz4689et1, g cg8 4.85 5.1 5.36 50 10 3 mmsz4690et1 cg9 5.32 5.6 5.88 50 10 4 mmsz4691et1 ch1 5.89 6.2 6.51 50 10 5 mmsz4692et1 ch2 6.46 6.8 7.14 50 10 5.1 mmsz4693et1 ch3 7.13 7.5 7.88 50 10 5.7 mmsz4697et1 ch7 9.50 10 10.50 50 1 7.6 mmsz4699et1 ch9 11.40 12 12.60 50 0.05 9.1 mmsz4701et1, g cj2 13.3 14 14.7 50 0.05 10.6 mmsz4702et1, g cj3 14.25 15 15.75 50 0.05 11.4 mmsz4703et1 cj4 15.20 16 16.80 50 0.05 12.1 mmsz4705et1 cj6 17.10 18 18.90 50 0.05 13.6 mmsz4709et1 ck1 22.80 24 25.20 50 0.01 18.2 mmsz4711et1 ck3 25.65 27 28.35 50 0.01 20.4 mmsz4717et1 ck9 40.85 43 45.15 50 0.01 32.6 1. nominal zener voltage is measured with the device junction in thermal equilibrium at t l = 30 c 1 c. *the ?g?? suffix indicates pb?free package available.
MMSZ4678ET1 series http://onsemi.com 3 typical characteristics vz , temperature coefficient (mv/ c) v z , nominal zener voltage (v) ?3 ?2 ?1 0 1 2 3 4 5 6 7 8 12 11 10 9 8 7 6 5 4 3 2 figure 1. temperature coefficients (temperature range ? 55 c to +150 c) typical t c values v z @ i zt vz , temperature coefficient (mv/ c) 100 10 1 10 10 0 v z , nominal zener voltage (v) figure 2. temperature coefficients (temperature range ? 55 c to +150 c) v z @ i zt 1.2 1.0 0.8 0.6 0.4 0.2 0 150 125 100 75 50 25 0 t, temperature ( c) figure 3. steady state power derating p d versus t a p d versus t l p pk , peak surge power (watts) 0.1 pw, pulse width (ms) figure 4. maximum nonrepetitive surge power 1 10 100 100 0 1000 100 10 1 rectangular waveform, t a = 25 c 100 v z , nominal zener voltage figure 5. effect of zener voltage on zener impedance 10 1 z zt , dynamic impedance ( ) 1000 100 10 1 t j = 25 c i z(ac) = 0.1 i z(dc) f = 1 khz i z = 1 ma 5 ma 20 ma v f , forward voltage (v) figure 6. typical forward voltage 1 .2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1 75 v (mmsz5267bt1) 91 v (mmsz5270bt1) 150 c 75 c 25 c 0 c typical t c values p d , power dissipation (watts)
MMSZ4678ET1 series http://onsemi.com 4 typical characteristics c, capacitance (pf) 100 v z , nominal zener voltage (v) figure 7. typical capacitance 1000 100 10 1 10 1 bias at 50% of v z nom t a = 25 c 0 v bias 1 v bias 12 v z , zener voltage (v) 100 10 1 0.1 0.01 10 8 6 4 2 0 t a = 25 c i z , zener current (ma) v z , zener voltage (v) 100 10 1 0.1 0.01 10 30 50 70 90 t a = 25 c i r , leakage current ( a) 9 0 v z , nominal zener voltage (v) figure 8. typical leakage current 1000 100 10 1 0.1 0.01 0.001 0.0001 0.00001 80 70 60 50 40 30 20 10 0 +150 c +25 c ?55 c i z , zener current (ma) figure 9. zener voltage versus zener current (v z up to 12 v) figure 10. zener voltage versus zener current (12 v to 91 v) 100 figure 11. 8 20 s pulse waveform 90 80 70 60 50 40 30 20 10 0 020406080 t, time ( s) t p t r pulse width (t p ) is defined as that point where the peak current decay = 8 s half value i rsm /2 @ 20 s % of peak pulse current peak value i rsm @ 8 s
MMSZ4678ET1 series http://onsemi.com 5 package dimensions sod?123 case 425?04 issue e style 1: pin 1. cathode 2. anode 1.22 0.048 mm inches scale 10:1 soldering footprint* notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. aaaa aaaa aaaa e b d a l c 1 2 a1 dim min nom max millimeters inches a 0.94 1.17 1.35 0.037 a1 0.00 0.05 0.10 0.000 b 0.51 0.61 0.71 0.020 c 1.60 0.15 0.055 d 1.40 1.80 e 2.54 2.69 2.84 0.100 ??? 3.68 0.140 l 0.25 3.86 0.010 h e 0.046 0.002 0.024 0.063 0.106 0.145 0.053 0.004 0.028 0.071 0.112 0.152 min nom max 3.56 h e ??? ??? ??? 0.006 ??? ??? ??? ??? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 MMSZ4678ET1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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